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> BUK457-600B philips original power mos transistor
BUK457-600B philips original power mos transistor
ORIGINAL PHILIPS SEMICONDUCTORS
I(D) Abs. Drain Current (A)=7.1
I(D) Abs. Max.(A) Drain Curr.=4.5
@Temp ( C) (Test Condition)=100
Absolute Max. Power Diss. (W)=150
Thermal Resistance Junc-Amb.=60
@(VDS) (V) (Test Condition)=30
@I(D) (A) (Test Condition)=1.0m
@V(DS) (V) (Test Condition)=600
@Temp ( C) (Test Condition)=25
@V(GS) (V) (Test Condition)=30
@V(GS) (V) (Test Condition)=10
@I(D) (A) (Test Condition)=6.5
g(fs) Min. (S) Trans. conduct.=5.0
g(fs) Max, (S) Trans. conduct,=8.0
@V(DS) (V) (Test Condition)=25
@Freq. (Hz) (Test Condition)=1.0M
td(on) Max (s) On time delay=40n
t(d)off Max. (s) Off time=250n
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