Kenosha Reuse Discussion Board > CALEDONIA, WI
> Commercial
> Automative
> Used
> No Warranty
> Mrf 21125 uhf power transistor (125W 3G)
Mrf 21125 uhf power transistor (125W 3G)
RF Power Fileld Effect Transistor
N Channel Enhancement Mode Lateral MOSFET
Designed for W CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used i n Class AB for PCN PCS/cellular radio and WLL
Typical 2 carrier W CDMA Performance for VDD = 28 Volts, IDQ = 1600
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at 5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
- 100% Tested under 2 carrier W CDMA
- Internally Matched, Controlled Q, for Ease of Use
- High Gain, High Efficiency and High Linearity
- Designed for Maximum Gain and Insertion Phase Flatness
- Characterized with Series Equivalent Large Signal Impedance Parameters
- Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
